Type Designator: 5N60A
MOSFET ©2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Publication Order Number: FCD5N60-F085/D FCD5N60-F085 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 1.1 Ω Features 600V, 4.6A, typ. Ds(on) =860mΩ@V. GS =10V Ultra Low Gate Charge (Typ. G = 16 nC) UIS Capability RoHS Compliant Qualified to AEC Q101. N-CHANNEL MOSFET DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed.
Type of Transistor: MOSFET
Messenger. Type of Control Channel: N -Channel
- 5N60: N-CHANNEL MOSFET: VBsemi Electronics Co. 5N60: Power MOSFET: DONGGUAN YOU FENG WEI E. 5N60A 5A 600V N-channel enhanced field effect transistor: SUNMATE electronic Co. 5N60D N-CHANNEL POWER MOSFET: 5N60F N-CHANNEL POWER MOSFET: 5N60G N-CHANNEL POWER MOSFET: 5N60K N-CHANNEL POWER MOSFET: Unisonic Technologies: 5N60L 4.5 Amps, 600 Volts N-CHANNEL MOSFET: SUNMATE electronic Co. 5N60P N-CHANNEL POWER MOSFET: 5N60T N-CHANNEL POWER MOSFET.
- Oct 15, 2020 5N60C Datasheet - 600V N-Channel MOSFET - Fairchild, FQP5N60C datasheet, 5N60C pdf, 5N60C pinout, 5N60C manual, 5N60C schematic, 5N60C equivalent, data.
5n60 Mosfet Switch
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 600 V
5n60 Mosfet Wiring
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
5n60 Mosfet Circuit
Rise Time (tr): 42 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm
Package: TO-220AB
Silicon atom structure. 5N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
5N60A Datasheet (PDF)
0.1. 5n60a 5n60af 5n60g.pdf Size:370K _nell
RoHS 5N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(5A, 600Volts)DESCRIPTIOND The Nell 5N60 is a three-terminal silicon Ddevice with current conduction capabilityof 5A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such
Transistor Mosfet 5n60
0.2. bt15n60a9f.pdf Size:102K _crhj
Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff
0.3. iqib75n60a3.pdf Size:230K _iqxprz
IQIB75N60A3PRELIMINARY DATASHEETIGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed1 Very low VCE(sat Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution3 High ruggedness, temperature stability- Parallel switching capability2, 4 Pb-free lead finish
0.4. iqab75n60a1.pdf Size:229K _iqxprz
IQAB75N60A1 PRELIMINARY DATASHEET IGBT Trench & Field Stop technology in TO247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time - 5s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability Parallel switching capability Pb-free lead finish; RoHS comp
0.5. tmd5n60az tmu5n60az.pdf Size:457K _trinnotech
TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
0.6. tmp5n60az tmpf5n60az.pdf Size:610K _trinnotech
TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
0.7. bt15n60a9f.pdf Size:102K _wuxi_china
Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff
Datasheet: 50N06A, 50N06AF, 50N06F, 50N06G, MSAFX50N20A, 50N30C, 5HB03N8, 5N20V, IRF5305, 5N60AF, 5N60G, 5N65A, 5N65AF, 5N65F, 5N65G, 5N90A, 5N90AF.
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